? AUIRFN8458 base part number package type standard pack orderable part number ?? form quantity ? AUIRFN8458 dual pqfn 5mm x 6mm tape and reel 4000 AUIRFN8458tr hexfet? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ absolute maximum ratings stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicat ed in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the ther mal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperat ure (ta) is 25c, unless otherwise specified. automotive grade ? dual pqfn 5x6 mm g d s gate drain source v dss 40v r ds(on) typ. 8.0m ? max 10m ? i d (@t c (bottom) = 25c 43a features ? advanced process technology ? dual n-channel mosfet ? ultra low on-resistance ? 175c operating temperature ? fast switching ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanc he rating. these features combine to make this product an extremely efficient and reliable device for use in automotive and wide variety of other applications. applications ? 12v automotive systems ? low power brushed motor ? braking ? parameter max. units i d @ t c (bottom) = 25c continuous drain current, v gs @ 10v 43 a i d @ t c (bottom) = 100c continuous drain current, v gs @ 10v 30 i dm pulsed drain current ? 180 p d @t c (bottom) = 25c power dissipation 34 w linear derating factor 0.23 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 35 mj e as (tested) single pulse avalanche energy ? 37 i ar avalanche current ? see fig. 14, 15, 22a, 22b a e ar repetitive avalanche energy ?? t j operating junction and -55 to + 175 c ? t stg storage temperature range 1 www.irf.com ? 2014 international rectifier submit datasheet feedback october 17, 2014 downloaded from: http:///
? AUIRFN8458 2 www.irf.com ? 2014 international rectifier submit datasheet feedback october 17, 2014 ? static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 37 CCC mv/c reference to 25c, i d = 1.0ma r ds(on) static drain-to-source on-resistance CCC 8.0 10 m ?? v gs = 10v, i d = 26a v gs(th) gate threshold voltage 2.2 CCC 3.9 v v ds = v gs , i d = 25a gfs forward transconductance 56 CCC CCC s v ds = 10v, i d = 26a r g internal gate resistance CCC 1.9 CCC ?? i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 40v, v gs = 0v CCC CCC 150 v ds = 40v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions q g total gate charge CCC 22 33 nc i d = 26a q gs gate-to-source charge CCC 6.3 CCC v ds = 20v q gd gate-to-drain ("miller" ) charge CCC 7.6 CCC v gs = 10v q sync total gate charge sync. (q g - q gd ) CCC 14.4 CCC i d = 26a, v ds =0v, v gs = 10v t d(on) turn-on delay time CCC 9.7 CCC ns v dd = 26v t r rise time CCC 71 CCC i d = 26a t d(off) turn-off delay time CCC 11 CCC r g = 2.7 ? t f fall time CCC 19 CCC v gs = 10v ? c iss input capacitance CCC 1060 CCC pf v gs = 0v c oss output capacitance CCC 170 CCC v ds = 25v c rss reverse transfer capacitance CCC 100 CCC ? = 1.0 mhz c oss eff. (er) effective output capacita nce (energy related) CCC 210 CCC v gs = 0v, v ds = 0v to 32v ? c oss eff. (tr) effective output capacita nce (time related) CCC 250 CCC v gs = 0v, v ds = 0v to 32v ? diode characteristics ??? ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 43 a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 180 a integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 26a, v gs = 0v ? dv/dt peak diode recovery CCC 8.2 CCC v/ns t j = 175c, i s = 26a, v ds = 40v ? t rr ? reverse recovery time CCC 18 CCC ns t j = 25c CCC 19 CCC t j = 125c q rr reverse recovery charge CCC 9.6 CCC nc t j = 25c CCC 11 CCC t j = 125c i rrm reverse recovery current CCC 0.89 CCC a t j = 25c v r = 34v, i f = 26a di/dt = 100a/s ? symbol parameter typ. max. units r ? jc (bottom) junction-to-case ? CCC 4.4 c/w r ? jc (top) junction-to-case ? CCC 50 r ? ja junction-to-ambient ? CCC 105 r ? ja (<10s) junction-to-ambient ? CCC 82 thermal resistance d s g downloaded from: http:///
? AUIRFN8458 3 www.irf.com ? 2014 international rectifier submit datasheet feedback october 17, 2014 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.8v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.15v bottom 4.8v fig. 2 typical output characteristics 3 4 5 6 7 8 9 10 11 12 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 10v ? 60s pulse width 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig. 3 typical transfer characteristics 0 5 10 15 20 25 30 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v v ds = 8.0v i d = 26a fig. 4 normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.15v bottom 4.8v ? 60s pulse width tj = 25c 4.8v fig. 1 typical output characteristics fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 43a v gs = 10v downloaded from: http:///
? AUIRFN8458 4 www.irf.com ? 2014 international rectifier submit datasheet feedback october 17, 2014 ? -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 40 42 44 46 48 50 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma 0.1 1 10 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc fig 8. maximum safe operating area fig 10. drain-to-source breakdown voltage 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 i d , d r a i n c u r r e n t ( a ) fig. 7 typical source-to-drain diode forward voltage -5 0 5 10 15 20 25 30 35 40 v ds, drain-to-source voltage (v) -0.02 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 e n e r g y ( j ) fig 11. typical c oss stored energy fig 9. maximum drain current vs. case temperature fig 12. typical on-resistanc e vs. drain current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 20 40 60 80 100 120 140 160 i d , drain current (a) 0 20 40 60 80 100 120 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v downloaded from: http:///
? AUIRFN8458 5 www.irf.com ? 2014 international rectifier submit datasheet feedback october 17, 2014 ? 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) fig 14. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and wa veforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 10 20 30 40 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 26a fig 15. maximum avalanche energy vs. temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 13. maximum effective transient thermal impedance, junction-to-case downloaded from: http:///
? AUIRFN8458 6 www.irf.com ? 2014 international rectifier submit datasheet feedback october 17, 2014 ? 100 200 300 400 500 600 di f /dt (a/s) 0 10 20 30 40 50 q r r ( n c ) i f = 17a v r = 64v t j = 25c t j = 125c fig 17. threshold voltage vs. temperature fig. 20 - typical recovery current vs. dif/dt 100 200 300 400 500 600 di f /dt (a/s) 0.0 1.0 2.0 3.0 4.0 i r r m ( a ) i f = 17a v r = 64v t j = 25c t j = 125c fig. 18 - typical recovery current vs. dif/dt fig. 21 - typical stored charge vs. dif/dt 100 200 300 400 500 600 di f /dt (a/s) 0 10 20 30 40 50 60 q r r ( n c ) i f = 26a v r = 64v t j = 25c t j = 125c fig. 19 - typical stored charge vs. dif/dt fig 16. typical on-resistance vs. gate voltage 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 26a t j = 25c t j = 125c -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 250a i d = 1.0ma i d = 1.0a 100 200 300 400 500 600 di f /dt (a/s) 0 1 2 3 4 i r r m ( a ) i f = 26a v r = 64v t j = 25c t j = 125c downloaded from: http:///
? AUIRFN8458 7 www.irf.com ? 2014 international rectifier submit datasheet feedback october 17, 2014 ? fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 22a. unclamped inductive test circuit fig 22b. unclamped inductive waveforms fig 23a. switching time test circuit fig 23b. switching time waveforms fig 24a. gate charge test circuit fig 24b. gate charge waveform vdd ? downloaded from: http:///
? AUIRFN8458 8 www.irf.com ? 2014 international rectifier submit datasheet feedback october 17, 2014 dual pqfn 5x6 package details note: for the most current drawing please refer to ir website at http://www.irf.com/package/ for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf dual pqfn 5x6 part marking xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) downloaded from: http:///
? AUIRFN8458 9 www.irf.com ? 2014 international rectifier submit datasheet feedback october 17, 2014 ? ? qualification standards can be foun d at international rectifiers web site: http//www.irf.com/ ?? highest passing voltage. notes: ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l =110h, r g = 50 ? , i as = 50a, v gs = 10v. ? ? i sd ? 50a, di/dt ? 650a/s, v dd ? v (br)dss , t j ? 175c. ? pulse width ? 400s; duty cycle ?? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as coss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that give s the same energy as coss while v ds is rising from 0 to 80% v dss . ? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 : http://www.irf.com/technical-info/appnotes/an-994.pdf ? r ? is measured at t j of approximately 90c. ? this value determined from sample failure population, starting t j = 25c, l= 110h, r g = 50 ? , i as = 50a, v gs =10v. qualification information ? ? qualification level automotive (per aec-q101) comments: this part number(s) passed au tomotive qualification. irs in- dustrial and consumer qualification leve l is granted by extension of the high- er automotive level. moisture sensitivity level dual pqfn 5mm x 6mm msl1 esd human body model class h1a (+/- 500v) ?? aec-q101-001 charged device model class c5 (+/- 1000v) ?? aec-q101-005 rohs compliant yes downloaded from: http:///
? AUIRFN8458 10 www.irf.com ? 2014 international rectifier submit datasheet feedback october 17, 2014 ? important notice unless specifically designated for the automotive market, internatio nal rectifier corporation and it s subsidiaries (ir) reserve the right to make corrections, modifi cations, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirement s with regards to product discontinuance and process change notification. all products are sold subject to irs terms and c onditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specificat ions applicable at the time of sale in accordance with irs standard warranty. testing and other qualit y control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, te sting of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer prod ucts and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations , and notices. reproduction of this information with altera- tions is an unfair and deceptive business practice. ir is not re sponsible or liable for such altered documentation. infor- mation of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indem nify and hold international rectifier and its officers, em- ployees, subsidiaries, affiliates, and di stributors harmless against a ll claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any clai m of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was neg ligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are de- signed and manufactured to meet dla military specifications required by certain m ilitary, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the bu yers own risk and that they are solely re sponsible for compliance with all legal a nd regulatory requirements in connection with such use. ir products are neither designed nor intended for use in autom otive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designa- tion au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///
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